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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX47 DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Intended for high voltage,fast switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Bast current Bast current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 400 7 9 15 8 10 125 175 -65~175 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A; IB=0;L=25mH IE=50mA; IC=0; IC=6A;IB=1.2 A IC=9A;IB=3 A IC=6A;IB=1.2 A VCE=850V;VBE=-2.5V TC=125 VEB=5V;IC=0 IC=1A ;VCE=5V 15 MIN 400 7 BUX47 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEV IEBO hFE TYP. MAX UNIT V 30 1.5 3 1.6 0.15 1.5 1 50 V V V V mA mA Switching times Ton ts tf Turn-on time Storage time Fall time IC=6A;IB1=-IB2=1.2A; VCC=150V 0.8 2.5 0.8 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX47 Fig.2 Outline dimensions 3 |
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